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| 1SS400G Diodes Switching diode 1SS400G Applications High frequency switching External dimensions (Units : mm) 1.00.05 1.40.05 Features 1) Ultra small mold type. (VMD2) 2) High reliability. 0.60.05 0.270.03 CATHODE MARK 0.130.03 3 0.50.05 Construction Silicon epitaxial planar ROHM : VMD2 EIAJ : JEDEC : - Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 150 -55~+150 Unit V V mA mA mA C C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 100 3.0 4.0 Unit V nA pF ns IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100 Conditions 1/2 1SS400G Diodes Electrical characteristic curves (Ta=25C) 100 FORWARD CURRENT : IF (A) Ta=75C 100 Ta=125C 10 REVERSE CURRENT : IR (A) Ta=125C Ta=25C 1 Ta=-25C 1 Ta=75C CAPACITANCE : Ct (pF) 10 10 1.0 0.1 0.1 Ta=25C 0.01 0.01 0.001 0 200 400 600 800 1000 0.001 0 20 40 60 80 100 0.1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Characteristics 2/2 |
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